Sree Narayana Guru College of Engineering and Technology, Payyanur
Second series test - April 2007
ENGINEERING PHYSICS(A)
(EEE/ECE/CSE)
Time: 2Hours Marks: 50
Part A: Answer all questions
Second series test - April 2007
ENGINEERING PHYSICS(A)
(EEE/ECE/CSE)
Time: 2Hours Marks: 50
Part A: Answer all questions
1. Describe the construction and working of a solar cell.
2. Explain the basic principle of electron spin resonance.
3. Discuss the signal distortion in optical fibres.
4. Explain the construction and working of a ruby laser with energy level diagram.
(4x5=20 Marks)
Part B: Answer two questions
5(a) Derive the time dependent Schrödinger’s wave equation for a free particle. (10 Marks)
(b) Explain with diagram how ultrasonics are generated by piezoelectric method. (5 Marks)
OR
6 (a) Setup the equation for the time independent Schrödinger’s equation. (10 Marks)
(b) Mention the properties of ultrasonics (5 Marks)
7 (a) Explain Hall effect. With necessary theory obtain the expression for the Hall coefficient and Hall voltage. (10 Marks)
(b) Explain Josephson effect. (5 Marks)
OR
8 (a) Discuss the effect of magnetic field on superconductors. (10 Marks)
(b) The Hall coefficient of a specimen of doped Si is found to be 3.36 x 10-4 m3/C. The resistivity of the specimen is 8.93 x10-3 Ωm. Find the mobility and the density of the charge carrier. (5 Marks)
OR
6 (a) Setup the equation for the time independent Schrödinger’s equation. (10 Marks)
(b) Mention the properties of ultrasonics (5 Marks)
7 (a) Explain Hall effect. With necessary theory obtain the expression for the Hall coefficient and Hall voltage. (10 Marks)
(b) Explain Josephson effect. (5 Marks)
OR
8 (a) Discuss the effect of magnetic field on superconductors. (10 Marks)
(b) The Hall coefficient of a specimen of doped Si is found to be 3.36 x 10-4 m3/C. The resistivity of the specimen is 8.93 x10-3 Ωm. Find the mobility and the density of the charge carrier. (5 Marks)